48,460 research outputs found

    Mechanism of phonon localized edge modes

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    The phonon localized edge modes are systematically studied, and two conditions are proposed for the existence of the localized edge modes: (I) coupling between different directions (xx, yy or zz) in the interaction; (II) different boundary conditions in three directions. The generality of these two conditions is illustrated by different lattice structures: one-dimensional (1D) chain, 2D square lattice, 2D graphene, 3D simple cubic lattice, 3D diamond structure, etc; and with different potentials: valence force field model, Brenner potential, etc.Comment: 5 pages, 8 fig

    Graphene-based tortional resonator from molecular dynamics simulation

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    Molecular dynamics simulations are performed to study graphene-based torsional mechanical resonators. The quality factor is calculated by QF=ωτ/2πQ_{F}=\omega\tau/2\pi, where the frequency ω\omega and life time τ\tau are obtained from the correlation function of the normal mode coordinate. Our simulations reveal the radius-dependence of the quality factor as QF=2628/(22R1+0.004R2)Q_{F}=2628/(22R^{-1}+0.004R^{2}), which yields a maximum value at some proper radius RR. This maximum point is due to the strong boundary effect in the torsional resonator, as disclosed by the temperature distribution in the resonator. Resulting from the same boundary effect, the quality factor shows a power law temperature-dependence with power factors bellow 1.0. The theoretical results supply some valuable information for the manipulation of the quality factor in future experimental devices based on the torsional mechanical resonator.Comment: (accepted by EPL). New email address for Jin-Wu Jiang after 22/Nov/2011: [email protected]

    Why edge effects are important on the intrinsic loss mechanisms of graphene nanoresonators?

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    Molecular dynamics simulations are performed to investigate edge effects on the quality factor of graphene nanoresonators with different edge configurations and of various sizes. If the periodic boundary condition is applied, very high quality factors (3×1053\times10^{5}) are obtained for all kinds of graphene nanoresonators. However, if the free boundary condition is applied, quality factors will be greatly reduced by two effects resulting from free edges: the imaginary edge vibration effect and the artificial effect. Imaginary edge vibrations will flip between a pair of doubly degenerate warping states during the mechanical oscillation of nanoresonators. The flipping process breaks the coherence of the mechanical oscillation of the nanoresonator, which is the dominant mechanism for extremely low quality factors. There is an artificial effect if the mechanical oscillation of the graphene nanoresonator is actuated according to an artificial vibration (non-natural vibration of the system), which slightly reduce the quality factor. The artificial effect can be eliminated by actuating the mechanical oscillation according to a natural vibration of the nanoresonator. Our simulations provide an explanation for the recent experiment, where the measured quality factor is low and varies between identical samples with free edges.Comment: accepted by J. Appl. Phy

    A theoretical study of thermal conductivity in single-walled boron nitride nanotubes

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    We perform a theoretical investigation on the thermal conductivity of single-walled boron nitride nanotubes (SWBNT) using the kinetic theory. By fitting to the phonon spectrum of boron nitride sheet, we develop an efficient and stable Tersoff-derived interatomic potential which is suitable for the study of heat transport in sp2 structures. We work out the selection rules for the three-phonon process with the help of the helical quantum numbers (κ,n)(\kappa, n) attributed to the symmetry group (line group) of the SWBNT. Our calculation shows that the thermal conductivity κph\kappa_{\rm ph} diverges with length as κphLβ\kappa_{\rm ph}\propto L^{\beta} with exponentially decaying β(T)eT/Tc\beta(T)\propto e^{-T/T_{c}}, which results from the competition between boundary scattering and three-phonon scattering for flexure modes. We find that the two flexure modes of the SWBNT make dominant contribution to the thermal conductivity, because their zero frequency locates at κ=±α\kappa=\pm\alpha where α\alpha is the rotational angle of the screw symmetry in SWBNT.Comment: accepted by PR

    Self-repairing in single-walled carbon nanotubes by heat treatment

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    Structure transformation by heat treatment in single-walled carbon nanotubes (SWCNT) is investigated using molecular dynamics simulation. The critical temperature for the collapse of pure SWCNT is as high as 4655 K due to strong covalent carbon-carbon bonding. Above 2000 K, the cross section of SWCNT changes from circle to ellipse. The self-repairing capability is then investigated and two efficient processes are observed for the SWCNT to repair themselves. (1) In the first mechanism, vacancy defects aggregate to form a bigger hole, and a bottleneck junction is constructed nearby. (2) In the second mechanism, a local curvature is generated around the isolate vacancy to smooth the SWCNT. Benefit from the powerful self-repairing capability, defective SWCNT can seek a stable configuration at high temperatures; thus the critical temperature for collapse is insensitive to the vacancy defect density.Comment: accepted by Journal of Applied Physic

    First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defect

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    The thermal conductance in graphene nanoribbon with a vacancy or silicon point defect (substitution of C by Si atom) is investigated by non-equilibrium Green's function (NEGF) formalism combined with first-principle calculations density-functional theory with local density approximation. An efficient correction to the force constant matrix is presented to solve the conflict between the long-range character of the {\it ab initio} approach and the first-nearest-neighboring character of the NEGF scheme. In nanoribbon with a vacancy defect, the thermal conductance is very sensitive to the position of the vacancy defect. A vacancy defect situated at the center of the nanoribbon generates a saddle-like surface, which greatly reduces the thermal conductance by strong scattering to all phonon modes; while an edge vacancy defect only results in a further reconstruction of the edge and slightly reduces the thermal conductance. For the Si defect, the position of the defect plays no role for the value of the thermal conductance, since the defective region is limited within a narrow area around the defect center.Comment: accepted by AP
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